Tetravalent titanium addition to copper ferrite electrical properties

B. L. Patil; A. B. Patil; M. G. Patil; V. C. Mahajan; B. V. Bhise; S. M. Chandake; S. R. Sawant; S. A. Patil

doi:10.1117/12.57041

1 February 1992 Tetravalent titanium addition to copper ferrite electrical properties

B. L. Patil, A. B. Patil, M. G. Patil, V. C. Mahajan, B. V. Bhise, S. M. Chandake, S. R. Sawant, S. A. Patil

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57041
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Electrical resistivity of the ferrites Cu_{1 + x}Ti_xFe_{2 - 2x}O₄ (x equals 0 to 0.5 insteps 0.05) has been measured in the temperature region 300 K to 700 K. It is seen that the plots of log (Rho) Vs 1/T exhibit a linear relationship throughout the temperature range. The conduction mechanism in these ferrites is explained on the basis of the hopping mechanism. The conduction in the low-temperature region (< 370 K) is due to impurities defects and interstitials, etc. In the high-temperature region (i.e., > 400 K), it is mainly due to hopping of small polarons. A sharp deviation from linearity is observed around 520 K which is related to the transition temperature close to tetragonal to cubic transformation. The compositional variation of resistivity increases slowly at lower content of Ti < 0.2 and monotonously for higher content > 0.3. The slight decrease in resistivity at x equals 0.2 is related to structural change from tetragonal to cubic. The variation of resistivity with Ti_x is attributed to the hindering of the mechanism for x < 0.2 and for x > 0.3 to impurities, in homogenous distribution of cations in the spinel.

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B. L. Patil, A. B. Patil, M. G. Patil, V. C. Mahajan, B. V. Bhise, S. M. Chandake, S. R. Sawant, and S. A. Patil "Tetravalent titanium addition to copper ferrite electrical properties", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57041

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