640 x 480 MOS PtSi IR sensor

Donald J. Sauer; Frank V. Shallcross; Fu-Lung Hseuh; Grazyna M. Meray; Peter A. Levine; Harvey R. Gilmartin; Thomas S. Villani; Benjamin J. Esposito; John R. Tower

doi:10.1117/12.48745

1 December 1991 640 x 480 MOS PtSi IR sensor

Donald J. Sauer, Frank V. Shallcross, Fu-Lung Hseuh, Grazyna M. Meray, Peter A. Levine, Harvey R. Gilmartin, Thomas S. Villani, Benjamin J. Esposito, John R. Tower

Author Affiliations +

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48745
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

The design of a 1st and 2nd generation 640(H) X 480(V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. Measured performance characteristics for Gen 1 devices are presented along with calculated performance for the Gen 2 design. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non- interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS170 operation) resulting in a form of 'electronic shutter,' or variable exposure control. The pixel size of 24-micrometers X 24-micrometers results in a fill factor of 38% for 1.5-micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.

Citation Download Citation

Donald J. Sauer, Frank V. Shallcross, Fu-Lung Hseuh, Grazyna M. Meray, Peter A. Levine, Harvey R. Gilmartin, Thomas S. Villani, Benjamin J. Esposito, and John R. Tower "640 x 480 MOS PtSi IR sensor", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48745

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available