Design of low-noise wide-dynamic-range GaAs optical preamps

Robert J. Bayruns; Timothy Laverick; Norman Scheinberg; Daniel Stofman

doi:10.1117/12.49322

1 November 1991 Design of low-noise wide-dynamic-range GaAs optical preamps

Robert J. Bayruns, Timothy Laverick, Norman Scheinberg, Daniel Stofman

Proceedings Volume 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing; (1991) https://doi.org/10.1117/12.49322
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

GaAs MESFET technology is ideal for use in lightwave receiver applications. FET devices have a fundamental advantage over BJT transistors in low noise applications because of their inherent high input impedance. Another advantage comes from the fact that FETs are majority carrier devices and can be easily used as feedback elements in automatic gain control applications.

Citation Download Citation

Robert J. Bayruns, Timothy Laverick, Norman Scheinberg, and Daniel Stofman "Design of low-noise wide-dynamic-range GaAs optical preamps", Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); https://doi.org/10.1117/12.49322

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