Paper
1 January 1992 Selective photodevices for the VUV
William R. Hunter, John F. Seely
Author Affiliations +
Abstract
Usually one wants a vuv detector to cover a very broad range of wavelengths (broad band) to avoid the inconvenience of changing detectors. Under certain conditions however narrow band detectors are most useful. Reflecting interference cathodes have been designed for the near infrared[l]. We propose to use limited versions of interference cathodes in the vuv the limitations being imposed by the generally large extinction coefficients of materials in that wavelength range. Thus far calculations have been made for the spectral region between 700 and 2000 A and for detectors used in normal incidence.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Hunter and John F. Seely "Selective photodevices for the VUV", Proc. SPIE 1546, Multilayer and Grazing Incidence X-Ray/EUV Optics, (1 January 1992); https://doi.org/10.1117/12.51247
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KEYWORDS
Magnesium fluoride

Sensors

Platinum

Silicon

Aluminum

Photodiodes

Reflectivity

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