Multilayer mirrors for XUV Ge laser wavelengths

Claude Montcalm; Brian Thomas Sullivan; Henri Pepin; Jerzy A. Dobrowolski; G. D. Enright

doi:10.1117/12.51275

1 January 1992 Multilayer mirrors for XUV Ge laser wavelengths

Claude Montcalm, Brian Thomas Sullivan, Henri Pepin, Jerzy A. Dobrowolski, G. D. Enright

Proceedings Volume 1547, Multilayer Optics for Advanced X-Ray Applications; (1992) https://doi.org/10.1117/12.51275
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Mo/Si multilayer mirrors with a high reflectance at normal incidence in the 232 - 236 angstrom spectral region have been deposited by rf magnetron sputtering for use in a XUV Ge-laser. The mirrors had a peak reflectance of 26% in this wavelength region. Characterization by TEM and XRD indicates good thickness control in the deposition process and low interface roughness, although interdiffusion is present at the interfaces. Preliminary experiments indicate that the XUV laser output intensity was increased when a multilayer mirror was added to allow a double pass through the gain medium.

Citation Download Citation

Claude Montcalm, Brian Thomas Sullivan, Henri Pepin, Jerzy A. Dobrowolski, and G. D. Enright "Multilayer mirrors for XUV Ge laser wavelengths", Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); https://doi.org/10.1117/12.51275

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