Low-temperature operation of silicon drift detectors

Timothy J. Sumner; S. Roe; G. K. Rochester; G. Hall; Per Evensen; B. S. Avset

doi:10.1117/12.48344

1 October 1991 Low-temperature operation of silicon drift detectors

Timothy J. Sumner, S. Roe, G. K. Rochester, G. Hall, Per Evensen, B. S. Avset

Proceedings Volume 1549, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy II; (1991) https://doi.org/10.1117/12.48344
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Two types of drift device, namely photodiodes and position sensitive drift chambers with segmented anode and cathode structures, have been studied at room temperature and below. Leakage current and electron mobility have been investigated at low temperature for the drift photodiodes. Self-triggering has been achieved for the position sensitive drift chambers using 60 keV photons, and differences in arrival time between the prompt trigger signal from the cathode and the delayed anode signal have been studied as a function of drift distance and temperature. The response of the photodiodes when coupled to a CsI scintillator at room temperature has been assessed.

Citation Download Citation

Timothy J. Sumner, S. Roe, G. K. Rochester, G. Hall, Per Evensen, and B. S. Avset "Low-temperature operation of silicon drift detectors", Proc. SPIE 1549, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy II, (1 October 1991); https://doi.org/10.1117/12.48344

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