Investigation on impurity behavior in semiconductors by use of Fourier transform spectroscopy

Shue-Chu Chen

doi:10.1117/12.56287

1 March 1992 Investigation on impurity behavior in semiconductors by use of Fourier transform spectroscopy

Shue-Chu Chen

Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56287
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany

Abstract

We report the comprehensive results obtained in our group in the investigation of impurity behavior in semiconductors by use of Fourier transform spectroscopy. We put emphasis in this paper on the electronic transitions of shallow impurities in ultrapure silicon. The new results reported here include the discovery and investigation of new shallow centers, the photothermal ionization spectroscopy of phosphorus in Si under high magnetic field, and the high sensitivity and resolution of PTIS as used for detection of shallow impurities in ultrapure silicon.

Citation Download Citation

Shue-Chu Chen "Investigation on impurity behavior in semiconductors by use of Fourier transform spectroscopy", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); https://doi.org/10.1117/12.56287

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