Self-aligned metal-SiO2-InP based MISFETs having modulation doped channels

F. Jain

doi:10.1117/12.2297831

1 October 1991 Self-aligned metal-SiO₂-InP based MISFETs having modulation doped channels

F. Jain

Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15763A (1991) https://doi.org/10.1117/12.2297831
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland

Abstract

A novel metal-SiO₂-InP MISFET (metal-insulator semiconductor field effect transistor) structure, incorporating a modulation doped channel and the self-aligned gate feature of Si MOSFETs, is proposed. Analytical results on current-voltage and transconductance characteristics are presented. Significant enhancement of performance over conventional MISFETs, employing SiO₂ as an insulator, is reported.

Citation Download Citation

F. Jain "Self-aligned metal-SiO₂-InP based MISFETs having modulation doped channels", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15763A (1 October 1991); https://doi.org/10.1117/12.2297831

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