High purity GaAs as a far infrared photoconductor

Jam Farhoomand

doi:10.1117/12.2297949

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1 October 1991 High purity GaAs as a far infrared photoconductor

Jam Farhoomand

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Proceedings Volume 1576, 16th International Conference on Infrared and Millimeter Waves; 15766K (1991) https://doi.org/10.1117/12.2297949
Event: 16th International Conference on Infrared and Millimeter Waves, 1991, Lausanne, Switzerland

Abstract

High purity GaAs exhibits excited state far-infrared photoconductivity in the temperature range from 2K to 4.2K. The response is characterized by an exceptionally sharp peak which is magnetically tunable over a broad range. This dominant peak, at 35.8 cm^-1 (279 μm), belongs to the 1s-2p transition of the residual shallow level impurities, and its response is over an order of magnitude above the continuum. The preliminary results of the measurements of responsivity, dark current, and NEP of this device are reported.

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Jam Farhoomand "High purity GaAs as a far infrared photoconductor", Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766K (1 October 1991); https://doi.org/10.1117/12.2297949

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