The noise characteristics are influenced by defects localized near Pt/GaAs interface, which defects are introduced in processes of wet etching, chemical surface treatments, reactive ion etching and deposition of SiO2 insulating layer. We have measured the diode noise characteristics, as the diode temperature was changed. Effects of chemical processes, composition of GaAs surface, damages by SiO2 sputtering on the diode noise have been measured. |
ACCESS THE FULL ARTICLE
No SPIE Account? Create one
CITATIONS
Cited by 2 scholarly publications.
Diodes
Extremely high frequency
Interfaces
Gallium arsenide
Chemical vapor deposition
Temperature metrology
Sensors