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1 December 1992 Diffusion coefficient of the minority carriers in quantum confined lasers
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Abstract
An attempt is made to study the diffusion coefficient of the minority carriers in A3II B2V , II—VI and IV-VI quantum confined laser by considering all types of anisotropies within the framework of K.P formation. It is found, taking Cd3P2, CdS and PpTe lasers as examples, that the diffusion constants increases with increasing electron concentration and decreasing film thickness in a step like manner respectively. The numerical values of the diffusion constants of the minority carriers are greatest for quantum wire lasers and least for quantum well lasers in all the cases. In addition, the theoretical formulation is in agreement with the experimental results as given elsewhere.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. P. Ghatak "Diffusion coefficient of the minority carriers in quantum confined lasers", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321815
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