Translator Disclaimer
Paper
1 December 1992 Fully self-consistent model of an integratable buried-heterostructure InP/InGaAsP laser diode
Author Affiliations +
Abstract
A self-consistent model of a buried heterostructure semiconductor injection laser is presented which simulates the static electrical and optical properties of buried ridge and constricted mesa lasers. It includes the effects of the superposition of all lasing modes. Results have been obtained showing that high p-type doping of the cap region has a beneficial effect on leakage current and the lateral optical field, especially at high output powers, leading to increased niodulatioii bandwidth.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. C. R. Gurney "Fully self-consistent model of an integratable buried-heterostructure InP/InGaAsP laser diode", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321808
PROCEEDINGS
PAGES


SHARE
Advertisement
Advertisement
Back to Top