InP-based MSM-HEMT receiver OEIC's for long-wavelength lightwave systems

Won-Pyo Hong

doi:10.1117/12.2321794

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1 December 1992 InP-based MSM-HEMT receiver OEIC's for long-wavelength lightwave systems

Won-Pyo Hong

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Proceedings Volume 1582, Integrated Optoelectronics for Communication and Processing; (1992) https://doi.org/10.1117/12.2321794
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

This paper reviews the recent progress in researching a planar receiver OEIC technology utilizing InGaAs MSM photodetectors and InAlAs/InGaAs HEMT amplifiers. The epitaxial materials have been grown by the low-pressure OMCVD technique on patterned InP substrates. This planar integration process has been used to address a number of different system needs. These include a balanced dual detector receiver for coherent detection, a trans-impedance amplifier receiver with a planar detector and waveguide integrated detector for direct detection, and a electronically-switched fourchannel receiver for wavelength-division-multiplexing based lightwave systems. This MSM-HEMT OEIC technology represents a major advance towards achieving high-performance and low-cost components for long-wavelength lightwave systems.

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Won-Pyo Hong "InP-based MSM-HEMT receiver OEIC's for long-wavelength lightwave systems", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321794

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