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1 December 1992 InP-based MSM-HEMT receiver OEIC's for long-wavelength lightwave systems
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Abstract
This paper reviews the recent progress in researching a planar receiver OEIC technology utilizing InGaAs MSM photodetectors and InAlAs/InGaAs HEMT amplifiers. The epitaxial materials have been grown by the low-pressure OMCVD technique on patterned InP substrates. This planar integration process has been used to address a number of different system needs. These include a balanced dual detector receiver for coherent detection, a trans-impedance amplifier receiver with a planar detector and waveguide integrated detector for direct detection, and a electronically-switched fourchannel receiver for wavelength-division-multiplexing based lightwave systems. This MSM-HEMT OEIC technology represents a major advance towards achieving high-performance and low-cost components for long-wavelength lightwave systems.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won-Pyo Hong "InP-based MSM-HEMT receiver OEIC's for long-wavelength lightwave systems", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321794
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