Novel processing techniques for optoelectonic devices and their integration

James L. Merz

doi:10.1117/12.2321799

1 December 1992 Novel processing techniques for optoelectonic devices and their integration

James L. Merz

Proceedings Volume 1582, Integrated Optoelectronics for Communication and Processing; (1992) https://doi.org/10.1117/12.2321799
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

Novel processing techniques currently being developed for the fabrication of optoelectronic devices will be described, including fabrication of low threshold lasers using in-situ-monitored reactive ion etching, the use of impurity-induced-disordering to form high-performance lasers with self-aligned Si/Zn-diffused junctions, and the fabrication of in-plane surface-emitting lasers with 45° etched facets. Application to the monolithic integration of optoelectronic devices will be discussed.

Citation Download Citation

James L. Merz "Novel processing techniques for optoelectonic devices and their integration", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321799

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available