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1 December 1992 Optical waveguide modulation in an (In,Ga)As strain layer superlattice structure
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Abstract
We report on the design and experimental characteristics of waveguide electroabsorption modulator structures realised in (In,Ga)As strain superlattice material grown by MBE. Maximum modulation depths at wavelengths near to 980 nm are obtained with 15% indium fraction. A switching ratio of nearly 2:1 was achieved with -8 V applied bias.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. T. Lee "Optical waveguide modulation in an (In,Ga)As strain layer superlattice structure", Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); https://doi.org/10.1117/12.2321809
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