Rare-earth-doped LiNbO3 waveguide amplifiers and lasers

Wolfgang Sohler

doi:10.1117/12.50880

1 December 1991 Rare-earth-doped LiNbO₃ waveguide amplifiers and lasers

Wolfgang Sohler

Proceedings Volume 1583, Integrated Optical Circuits; (1991) https://doi.org/10.1117/12.50880
Event: OE Fiber, 1991, Boston, MA, United States

Abstract

The recent development of Nd3+- and Er3+?doped waveguide amplifiers and lasers in LiNbO3 with proton-exchanged or Ti-diffused channels is reviewed. Besides rare earth doped bulk crystals, also initially undoped substrates have been used for device fabrication. The latter were doped by ion-implantation, followed by thermal annealing, or by indiffusion of an evaporated (photolithographically defined) metallic (Er-) layer. Low threshold (a few mW of absorbed pump power), single transversal mode waveguide lasers of about 1 cm length and medium-gain (up to 7.5 dB) optical amplifiers have been developed in several versions in the Nd-doped material for ? = 1.08/?m (emission) wavelength. With Er a low-gain, but broadband optical amplifier for the wavelength range 1.53mm < ? < 1.62 ?m has been demonstrated as well as a 1 cm long laser of ? = 1.532 ?m emission wavelength.

Citation Download Citation

Wolfgang Sohler "Rare-earth-doped LiNbO₃ waveguide amplifiers and lasers", Proc. SPIE 1583, Integrated Optical Circuits, (1 December 1991); https://doi.org/10.1117/12.50880

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