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1 February 1992 In-situ auto ash: a key to reducing process-generated particles
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Proceedings Volume 1593, Dry Etch Technology; (1992)
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Production of quality devices with high yield requires low contamination process environments. In particular, trace levels of moisture and by-product generated particles will lead to defects and loss of device yield. It is well established that chip sizes are increasing, while the feature sizes of these devices are headed towards 0.35 micron and below by the early to mid 1990s. These small features are sensitive to the population of previously insignificantly-sized particles, which were always present but did not cause high yield loss. Smaller feature sizes are more sensitive to process contamination. Previous work has shown that particles generated during process are often the results of the chemistry in use 1 . In oxide etching halocarbons are commonly used. These gases are known to generate carbon based polymers, which are a recognized source of process generated particles. An in situ process has been developed to minimize thegeneration and accumulation of by-products. Particle data and process reproducibility data will be presented using this auto ash technique.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zia Hasan, Joseph A. Maher, James E. Nulty, and Larry Krynski "In-situ auto ash: a key to reducing process-generated particles", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992);

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