Paper
1 January 1992 In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems
Thomas E. Metz, Richard N. Savage, Horace O. Simmons
Author Affiliations +
Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56629
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
This paper will explore the methodologies of real-time measurement of photoresist film thickness on silicon wafers using multi-wavelength reflection interferometry. Reflected light from the wafer’s surface, containing the interference profile, is collected in-situ via a fiber optic cable and film thickness is determined in real-time via a pattern recognition algorithm. The instrumentation used to make this measurement and its application towards optimizing track performance during spin-coating and bake will be discussed. Data demonstrating basic thickness versus spin-time and thickness versus bake-time profiles acquired on-line without process disruption will be presented along with its utilization towards minimizing process set-up and machine qualification. Moreover, the advantages of characterizing film thickness on-line and in real-time will be reviewed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas E. Metz, Richard N. Savage, and Horace O. Simmons "In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56629
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Photoresist materials

Process control

Coating

Control systems

Metrology

Spectroscopy

Back to Top