Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition

James C. Sturm; Xiaodong Xiao; H. Manoharan; P. V. Schwartz

doi:10.1117/12.56667

1 February 1992 Optical properties of Si_1-xGe_x quantum wells and superlattices grown by rapid thermal chemical vapor deposition

James C. Sturm, Xiaodong Xiao, H. Manoharan, P. V. Schwartz

Author Affiliations +

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56667
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Through proper reactor design and accurate temperature measurement, high quality silicon/silicon-germanium alloy (Si1-xGex) strained layer structures can be grown by Rapid Thermal Chemical Vapor Deposition with growth temperatures in the 600-700 ° C range. Photoluminescence measurements show well resolved band-edge features, indicating that the films are of very high quality. Quantum confinement effects have also been observed in quantum wells with widths down to 3 nm.

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James C. Sturm, Xiaodong Xiao, H. Manoharan, and P. V. Schwartz "Optical properties of Si_1-xGe_x quantum wells and superlattices grown by rapid thermal chemical vapor deposition", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56667

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