Review of rapid thermal processing: system design and applications

Xiao-Li Xu; Jim J. Wortman; Mehmet C. Ozturk; Furman Yates Sorrell

doi:10.1117/12.56659

Translator Disclaimer

1 February 1992 Review of rapid thermal processing: system design and applications

Xiao-Li Xu, Jim J. Wortman, Mehmet C. Ozturk, Furman Yates Sorrell

Author Affiliations +

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56659
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Issues of rapid thermal processing (RTP) system design and process applications are reviewed. Temperature measurement is the most important and limiting factor in current RTP systems. Problems related to the temperature measurement and control and potential solutions are discussed. Process uniformity control is another important issue in RTP system design. Reactor chamber design, selection and arrangement of heat source, as well as issues related to dislocation generation, patterned and doped wafer, and ramp-up (down) thennal cycle are considered. Experimental results (RTO, RTCVD silicon nitride and polysilicon) based on an in-house RTP system developed in our laboratory are taken as examples to demonstrate the process applications and system requirements for single wafer processing.

Citation Download Citation

Xiao-Li Xu, Jim J. Wortman, Mehmet C. Ozturk, and Furman Yates Sorrell "Review of rapid thermal processing: system design and applications", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56659

ACCESS THE FULL ARTICLE