High-Tc field-effect transistor-like structure made from YBCO ultrathin films

X. X. Xi

doi:10.1117/12.2321828

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1 March 1992 High-Tc field-effect transistor-like structure made from YBCO ultrathin films

X. X. Xi

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Proceedings Volume 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II; (1992) https://doi.org/10.1117/12.2321828
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

A high-T_c field-effect transistor-like structure (SuFET) was made which consisted of an ultrathin YBa₂Cu₃O_7-x (YBCO) film, a dielectric SrTiO₃ layer and a gold gate electrode. The use of ultrathin films of a few unit cells thickness and an epitaxially grown dielectric layer allowed a relative change in the areal carrier density of YBCO in excess of 20%. A comparable amount of modulation was obtained in normal state resistivity and T_c. The J_c of the channel layer was changed by ~90% when a gate voltage was applied, showing the promise to build a field-effect device using high-T_c superconductors.

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X. X. Xi "High-Tc field-effect transistor-like structure made from YBCO ultrathin films", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321828

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