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1 March 1992 High resolution patterning of thin HTSC films evaluation of lithography and dry etching
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Abstract
Device applications of HTSC films require a precise fine line patterning process. Pattern transfer starts with lithography, followed by a dry etch procedure and ends with the removal of the mask. UV-, X-ray, and e-beam lithography is compared with respect to the handling of the small samples of about 10x10x0.9mm3 used nowadays and with respect to the pattern fidelity. Single layer and multi layer resist structures with linewidths down to 100 nm are used to study the etching of YBa2Cu3O7-x films in different etching equipments (RIE, RIBE). Physical sputtering is the dominant mechanism for the removal of these films. The electrical properties of micron and submicron structures prepared with several testmasks are examined.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Pilz "High resolution patterning of thin HTSC films evaluation of lithography and dry etching", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321839
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