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5 March 1993 Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia
Ke-Qum Qiu, Shu-Chen Cao, Hu-Zhong Wang, Ke-Ning Wang, Ton-Ha Xiao, Ke-Wei Shen
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Proceedings Volume 1616, International Conference on Photodynamic Therapy and Laser Medicine; (1993) https://doi.org/10.1117/12.136972
Event: International Conference on Photodynamic Therapy and Laser Medicine, 1991, Beijing, China
Abstract
GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ke-Qum Qiu, Shu-Chen Cao, Hu-Zhong Wang, Ke-Ning Wang, Ton-Ha Xiao, and Ke-Wei Shen "Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia", Proc. SPIE 1616, International Conference on Photodynamic Therapy and Laser Medicine, (5 March 1993); https://doi.org/10.1117/12.136972
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KEYWORDS
Nerve

Semiconductor lasers

Gallium arsenide

Laser irradiation

Laser therapeutics

Microscopes

Pulsed laser operation

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