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16 December 1992 Monolithic MSM photodetector/amplifier optical receiver on GaAs substrate
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992)
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
A monoli thi c opti cal rcei vex' consisting of an MSM-PD and MESFET anp1ifiez' for near 850nrn wavelength applications has been designed and fabricated on GaAs substrate. The parameters avaluated on fabricated test structures such as 1pm MESFET and MSM-PD were used as the model parameters for receiver circuit simula tion. The mesa epitaxial 1pm MESFET. technology was used for receiver fabrication. The receiver module characterized for output response showed values close to the simulated values of 3dB upper cut-off frequency of 370MHz with a flat trazis impedance of 3.5KQ.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. C. Dumka, Mousumi Mazumdar, M. S. Yadav, and Babu Ram Singh "Monolithic MSM photodetector/amplifier optical receiver on GaAs substrate", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992);

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