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16 December 1992 Optical detectors and millimeter-wave amplifiers: structures for integration and their performance
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Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.637282
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India
Abstract
The modulation-doped field-ffect transistors (MODFETs) based on 111-V materials have demonstrated low-noise and high power gain performance at millimeter-wave frequencies beyond 100 GHz. Use of these devices for high speed optoelectronic receivers will depend heavily on integrated circuits (OEICs) built with optical detector and transistor amplifier structures. This overview paper examines the limitations of compatible MSM detector diode and a transimpedance amplifying MODFET circuit and projects the performance of a receiver based on them with 23 Gb/s response. I.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mukunda B. Das "Optical detectors and millimeter-wave amplifiers: structures for integration and their performance", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.637282
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