Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

V. V. Luc; Petr Georgievich Eliseev; M. A. Man'ko; M. V. Tsotsoriya

doi:10.1117/12.636835

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16 December 1992 Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

V. V. Luc, Petr Georgievich Eliseev, M. A. Man'ko, M. V. Tsotsoriya

Author Affiliations +

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636835
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.

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V. V. Luc, Petr Georgievich Eliseev, M. A. Man'ko, and M. V. Tsotsoriya "Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636835

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