GaAs avalanche photoconductive switches: new technological developments

Thibaut T. de Saxce

doi:10.1117/12.59068

Translator Disclaimer

12 May 1992 GaAs avalanche photoconductive switches: new technological developtments

Thibaut T. de Saxce

Author Affiliations +

Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59068
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

GaAs avalanche photoconductive switches are promizing devices for high power switching because of their geometric scalability, high voltage hold-off, and very low activating optical energy. The ultimate performances of these devices will depend critically on the semiconductor geometry, the electrodes geometry, the contacts technology and the semiconductor surface preparation. This paper describes comparatives tests of GaAs switches by varying these parameters. In particular, switches passivated by GaAs-glass bonding technology have been tested. Breakdown tests and sub-nanosecond switching tests using a 150 ps Nd:YAG laser are presented. Our goal is to switch 50 to 100 kV and 2 kA in less than 200 ps.

Citation Download Citation

Thibaut T. de Saxce "GaAs avalanche photoconductive switches: new technological developtments", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59068

ACCESS THE FULL ARTICLE