Translator Disclaimer
Paper
12 May 1992 Review of ohmic contacts to compound semiconductors
Author Affiliations +
Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59062
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
A solid state switch is required to pass very high current densities, J, upon demand. Electrical access to the switch is through ohmic contacts which interface the device to the external circuit. Thus, accurate characterization of these contacts is essential in the design of the switch. Most work to date has centered around the electrical characteristics of switches, in particular the resistance R, and a reduction in joule (J2R) heating. In this paper we consider both the electrical characteristics and the thermal stability of the ohmic contacts on the operation of solid state switches. Thermal stability is important due to the inherent heating of the switch during its on time. Further, some applications will place switches in environments requiring operation at high temperature. The paper describes the present status of ohmic contacts to GaAs and InP.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter A. Barnes "Review of ohmic contacts to compound semiconductors", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59062
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Electrical properties of carbon nanotube FETs
Proceedings of SPIE (September 04 2008)
Nonalloyed contacts to p-type GaAs
Proceedings of SPIE (June 09 1993)
Low loss low voltage AlGaAs GaAs high speed optical switch...
Proceedings of SPIE (February 20 2007)
Electron-Beam Controlled Semiconductor Switches
Proceedings of SPIE (April 06 1988)

Back to Top