Design of InGaAs strained quantum-well lasers for high-temperature operation

Pamela L. Derry; Richard J. Fu; Chi-Shain Hong; Eric Y. Chan; K. Chiu; Harold E. Hager; Luis Figueroa

doi:10.1117/12.59169

26 June 1992 Design of InGaAs strained quantum-well lasers for high-temperature operation

Pamela L. Derry, Richard J. Fu, Chi-Shain Hong, Eric Y. Chan, K. Chiu, Harold E. Hager, Luis Figueroa

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59169
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The effect of high temperature on the threshold gain and threshold current density of an InGaAs (GaAs based) strained quantum well laser is examined both theoretically and experimentally. It is shown that designing a quantum well laser for low threshold gain through the use of a long laser cavity and/or high reflectivity facet coatings will reduce the temperature induced threshold current increase. This result is related to the nonlinear dependence of quantum well gain and current density on carrier density. The high temperature characteristics of strained InGaAs and GaAs QWs are also compared.

Citation Download Citation

Pamela L. Derry, Richard J. Fu, Chi-Shain Hong, Eric Y. Chan, K. Chiu, Harold E. Hager, and Luis Figueroa "Design of InGaAs strained quantum-well lasers for high-temperature operation", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59169

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