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26 June 1992 High-frequency modulation of semiconductor laser amplifiers
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Abstract
Picosecond pulse amplification in modulated amplifiers is demonstrated with negligible pulse distortion for modulation frequencies between 1 and 4 0Hz. Existing measurements show that up to 2.5 GHz modulation can be achieved with a gate "on" time of 200 ps. A numerical model is reported which simulates the behaviour of diode laser amplifiers under RF current modulation and is shown to be in good agreementwith experimental demonstration. A simple analytical modelis also reported to indicate the physical causes in observed operating trends. It is shown that in optimized bulk devices, good modulation depth could potentially be achieved with a 100 ps gate "on" time at 5GHz modulation frequency.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew M. Lomax and Ian H. White "High-frequency modulation of semiconductor laser amplifiers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59142
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