High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 um

Jingchang Zhong; Ronghui Li; Baoren Zhu; Yingjie Zhao

doi:10.1117/12.59156

26 June 1992 High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 micron

Jingchang Zhong, Ronghui Li, Baoren Zhu, Yingjie Zhao

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59156
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

High-power large-optical-cavity (LOC) InGaAsP-InP lasers emitting at 1.55 micron were prepared by using a proper LPE growth technique. Long-lived LOC lasers with the output power higher than 2 W in pulsed operation at room temperature were fabricated, with the threshold currents as low as Jth = 2.7 KA/sq cm or less and temperature stability as high as T0 of 130 K.

Citation Download Citation

Jingchang Zhong, Ronghui Li, Baoren Zhu, and Yingjie Zhao "High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 micron", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59156

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