High-speed properties of 1.55 um InGaAs-InGaAsP MQW L/4 shifted DFB lasers

Kazuhisa Uomi; Emiko Aoki; Tomonobu Tsuchiya; Munetoshi Suzuki

doi:10.1117/12.59128

26 June 1992 High-speed properties of 1.55 μm InGaAs-InGaAsP MQW λ/4-shifted DFB lasers

Kazuhisa Uomi, Emiko Aoki, Tomonobu Tsuchiya, Munetoshi Suzuki

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59128
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

A high-speed low-chirp 1.55 j.tm MQW-DFB laser is demonstrated through the optimization of an MQW active layer. A 3 dB bandwidth of 15 GHz and a record chirp width of 0.26 nm under 10 Gbit/s direct modulation were obtained. The dependence of the intrinsic dynamic properties, such as the relaxation oscillation frequency and damping K-factor, on the number of quantum wells is also investigated. The physical origin of the nonlinear damping is investigated by focusing on the laser structure and the wavelength dependence of the nonlinear gain coefficient e in semiconductor lasers.

Citation Download Citation

Kazuhisa Uomi, Emiko Aoki, Tomonobu Tsuchiya, and Munetoshi Suzuki "High-speed properties of 1.55 μm InGaAs-InGaAsP MQW λ/4-shifted DFB lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59128

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