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26 June 1992 (InAs)1/(GaAs)4 superlattices strained quantum-well lasers
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We report the fabrication and performance of (InAs)1 /(GaAs)4 short-period superlattices (SPS) strained quantum-well lasers emiuing near 1 jim. The (InAs)1 /(GaAs)4 superlattices is an ordered counterpart of 'NO.2Ga8As random alloy, and provides an alternative method of fabricating high speed electronic and photonic devices. The 0.96-mm-long devices have lased with a broad area threshold current density of 100 A cm 2 The 250-p.m long ridge waveguide lasers fabricated on the same wafer have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA/facet and have operated to a temperature of 200°C with a characteristic temperature T0 = l75K in the 2O°C to 8O°C range.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naresh Chand, Niloy K. Dutta, and John Lopata "(InAs)1/(GaAs)4 superlattices strained quantum-well lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992);

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