Operating characteristics of broad area traveling wave semiconductor amplifiers

David G. Mehuys; Lew Goldberg

doi:10.1117/12.59121

26 June 1992 Operating characteristics of broad area traveling wave semiconductor amplifiers

David G. Mehuys, Lew Goldberg

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59121
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Broad area traveling wave amplifiers in single-pass and double-pass configurations have been characterized using both analytical and experimental methods. Amplified emission up to 12.0 W in a nearly-diffraction-limited beam was achieved from double-pass amplifiers under short-pulse conditions, and 7.7 W in a nearly-diffraction-limited beam was achieved from single-pass amplifiers under long-pulse conditions.

Citation Download Citation

David G. Mehuys and Lew Goldberg "Operating characteristics of broad area traveling wave semiconductor amplifiers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59121

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