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26 June 1992 Semiconductor laser with unstable resonator consisting of negative cylindrical lenses
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We have obtained high power single-lateral-mode operation in wide-stripe InGaAs/GaAs/A1GaAs semiconductor lasers using a monolithic unstable resonator (consisting of diverging elements incorporated above an asymmetric GRIN-SCH). The fabrication involves MOCVD regrowth after wet-chemical etching of lens-like patterns in a GaAs layer above the active region. Pulsed output powers of 175 mW and 490 mW have been obtained in 170 p.m and 100 tm wide lasers respectively, with spatial coherence in the near-field exceeding 60%. We observe good lateral mode discrimination upto 3.5 times threshold in 100 .tm stripes with a round-trip magnification of 6.4.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Swaminathan T. Srinivasan, Christian F. Schaus, Shang Zhu Sun, Eric A. Armour, Alan H. Paxton, David J. Gallant, and Charles E. Moeller "Semiconductor laser with unstable resonator consisting of negative cylindrical lenses", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992);

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