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12 August 1992 Epitaxial growth of p+ silicon on a backside-thinned CCD for enhanced UV response
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Proceedings Volume 1656, High-Resolution Sensors and Hybrid Systems; (1992) https://doi.org/10.1117/12.135951
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
Abstract
We have used low temperature molecular beam epitaxy to grow p+ silicon on a backside-thinned Reticon 512x5 12 CCD. The techniques for preparing the CCD for the growth and the processing conditions are discussed. A 50 A layer of silicon doped with 3x102 B/cm3 was grown at a substrate temperature of 450C. The ultraviolet quantum efficiency of the modified CCD was significantly higher than that of a CCD with an untreated back surface. Charging the back surface of the modified CCD with a Uv flood did not affect the quantum efficiency indicating that the bands were pinned by the added p+ layer. Gold contamination measured by secondary ion mass spectrometry to have a concentration of 1 x 1 0 18 cm3 near the back surface caused the UV quantum efficiency to be lower than optimum by reducing the minority carrier lifetime. 2.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael E. Hoenk, Paula J. Grunthaner, Frank J. Grunthaner, Robert W. Terhune, and Masoud M. Fattahi "Epitaxial growth of p+ silicon on a backside-thinned CCD for enhanced UV response", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); https://doi.org/10.1117/12.135951
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