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12 August 1992 Recent advances in short-wavelength AR coatings for thinned CCDs
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Proceedings Volume 1656, High-Resolution Sensors and Hybrid Systems; (1992)
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
This paper discusses the development of two materials as AR coatings for thinned backilluminated charge-coupled devices. The first material is the heavy metal oxide Ta205 deposited as a spin on layer using sol-gel technology. The second material is Si3N4. Both these films have the high index of refraction and low absorption coefficients needed to produce good AR coatings in the near UV down to 300 nm. The goal of the program was to produce a coating which would yield devices with quantum efficiencies of greater than 50 at 300 nm. Both these materials satisfy this goal. Data on test devices will be reported. . 1.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morley Blouke, Michael D. Nelson, M. Serra, Andre Knoesen, B. Higgins, W. Alan Delamere, Gary L. Womack, James S. Flores, T. M. Duncan, and R. Reed "Recent advances in short-wavelength AR coatings for thinned CCDs", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992);


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