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9 July 1992 Manufacturing implementation of deep-UV lithography for 500-nm devices
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Abstract
Lithographers have steadily reduced exposure wavelength and increased numerical aperture (NA) to maintain process window and simplicity. The G-line systems of the 1970s gave way to the I-line systems of the late 80s, and then to the deep ultraviolet (DUV) systems of today. This paper describes our characterization of a DUV lithography system for the manufacture of 16-Mb DRAM chips at 500-nm ground rules. The process consists of a positive-tone, aqueous-base developable photoresist with an overcoat for sensitivity control, and an anti- reflective coating (ARC) on selected levels. The exposure tools used are step-and-scan systems with a 0.36 NA and expose bandpass of 240 - 255 nm. Apply and develop processes are clustered with the expose tool to minimize defects, reduce cycle time, and eliminate process variables.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven J. Holmes, Albert S. Bergendahl, Diana D. Dunn, J. Guidry, Mark C. Hakey, Karey L. Holland, Andy Horr, Dean C. Humphrey, Stephen E. Knight, D. Macaluso, Katherine C. Norris, Denis Poley, Paul A. Rabidoux, John L. Sturtevant, and Dean Writer "Manufacturing implementation of deep-UV lithography for 500-nm devices", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136040
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