Paper
9 July 1992 Model and measurement of resist heating effect in EBL (Poster Paper)
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Abstract
Measurements of dose characteristics of PMMA were performed with various resist temperatures. The quantitative data shows sensitivity changes with the temperature increase. The model of resist heating effect is presented and a possible technique to correct distortions due to resist heating is discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Babin, Ivan Kostic, and A. A. Svintsov "Model and measurement of resist heating effect in EBL (Poster Paper)", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136030
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KEYWORDS
Polymethylmethacrylate

Temperature metrology

Electron beam lithography

Lithium

Molecules

Silicon

Lithography

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