Study of single-layer e-beam lithography for x-ray mask making

Yukiko Kikuchi; Yuji Takigami; Ichiro Mori; Yoshio Gomei

doi:10.1117/12.136010

9 July 1992 Study of single-layer e-beam lithography for x-ray mask making

Yukiko Kikuchi, Yuji Takigami, Ichiro Mori, Yoshio Gomei

Proceedings Volume 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II; (1992) https://doi.org/10.1117/12.136010
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

The possibilities of sub-quarter-micron pattern fabrication by e-beam lithography with single- layer resist was studied on 0.5 micrometers thick W x-ray mask absorber. Calculation was made to evaluate the parameters determining the e-beam dose profile in the resist. It was found that at the incident energy of 40 keV pattern contrast in the resist, whose thickness is 0.2 micrometers , is homogenized through the depth. The experimental result proved that 0.15 micrometers line/space can be resolved by using a high contrast resist with this thickness.

Citation Download Citation

Yukiko Kikuchi, Yuji Takigami, Ichiro Mori, and Yoshio Gomei "Study of single-layer e-beam lithography for x-ray mask making", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136010

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