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1 June 1992 Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification
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Abstract
We designed a new chemical amplification resist for ArF and KrF excimer lithography. The resist comprises alicyclic the copolymer of adamantylmethacrylate and tert-butylmethacrylate, with triphenylsulfonium hexafluoroantimonate as a photo acid generator. This resist is highly transparent at KrF and ArF wavelengths because it has no aromatic and its dry etch resistance is comparable to that of a Novolac resist. The lithographic performance of this resist was evaluated using a KrF excimer laser stepper. A less than 0.5 micron line and space pattern profile was obtained with our resist.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuko Kaimoto, Koji Nozaki, Satoshi Takechi, and Naomichi Abe "Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59727
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