Comparison of etching tools for resist pattern transfer

Mark W. Horn; Mark A. Hartney; Roderick R. Kunz

doi:10.1117/12.59764

1 June 1992 Comparison of etching tools for resist pattern transfer

Mark W. Horn, Mark A. Hartney, Roderick R. Kunz

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59764
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Several etching tools were evaluated for the oxygen-based plasma pattern transfer step in surface imaging and multilayer resist processes. These tools include a conventional parallel- plate reactive ion etcher, a magnetically enhanced reactive ion etcher, an electron cyclotron resonance reactor, and a Helicon (rf helical resonator) reactor. The performance of each tool was examined with respect to etch rate, etch profile, selectivity between the imaging layer and the pattern transfer layer, etch uniformity, etching residue, linewidth uniformity, and process latitude.

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Mark W. Horn, Mark A. Hartney, and Roderick R. Kunz "Comparison of etching tools for resist pattern transfer", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59764

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