Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs

Doowon Suh; Shane R. Palmer; Subhankar Chatterjee; Hans-Joachim Merrem; Robert C. Haltom

doi:10.1117/12.59758

1 June 1992 Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs

Doowon Suh, Shane R. Palmer, Subhankar Chatterjee, Hans-Joachim Merrem, Robert C. Haltom

Author Affiliations +

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59758
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

We report here the initial lithographic evaluation of AZ DN-21, a commercial, negative tone, aqueous alkali developable, chemically amplified resist. The resist was exposed with 248 nm light from a KrF laser on a Canon deep UV stepper with NA 0.37. Feature sizes down to 0.35 microns were printed with good focus and exposure latitude. The resist profiles are nearly vertical with a slight undercutting at the bottom of the feature and a slight rounding of the top. We also report some initial results from a study of the effects of delays in resist processing. For a given dose, delays in the processing increased the measured linewidths. Results from a calculation of the effective activation energy for crosslinking are also presented. For the PEB temperatures investigated, the effective energy was found to be a function of the PEB temperature.

Citation Download Citation

Doowon Suh, Shane R. Palmer, Subhankar Chatterjee, Hans-Joachim Merrem, and Robert C. Haltom "Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59758

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