Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data

Stewart A. Robertson; J. Tom M. Stevenson; Robert J. Holwill; Steven G. Hansen; Charles E. Ebersole; Mark Thirsk; Ivan S. Daraktchiev

doi:10.1117/12.59747

1 June 1992 Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data

Stewart A. Robertson, J. Tom M. Stevenson, Robert J. Holwill, Steven G. Hansen, Charles E. Ebersole, Mark Thirsk, Ivan S. Daraktchiev

Author Affiliations +

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59747
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

This paper describes how absolute thickness data obtained from a track development rate monitor (TDRM) can be used to quantify resist dissolution in a very accurate manner. There is a demonstration of how bulk dissolution rate, surface inhibition, and post exposure bake (PEB) effects can be characterized. An empirical surface inhibition model is derived and accompanied by a description of how the required input parameters can be extracted from TDRM output. Three different development processes (immersion, continuous spray, and puddle) are fully characterized for two separate resist systems and the observed similarities and differences are discussed.

Citation Download Citation

Stewart A. Robertson, J. Tom M. Stevenson, Robert J. Holwill, Steven G. Hansen, Charles E. Ebersole, Mark Thirsk, and Ivan S. Daraktchiev "Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59747

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