Quarter-micron deep-UV lithography with silylation process

Masayuki Endo; Takahiro Matsuo; Kazuhiko Hashimoto; Masaru Sasago; Noboru Nomura

doi:10.1117/12.59766

1 June 1992 Quarter-micron deep-UV lithography with silylation process

Masayuki Endo, Takahiro Matsuo, Kazuhiko Hashimoto, Masaru Sasago, Noboru Nomura

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59766
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

We have developed a new quarter-micron lithography technology. This technology is characterized as a KrF excimer laser lithography combined with silylation process. We found that the high potential of resolution improvement with KrF excimer laser lithography can be enhanced using the surface imaging method. In this paper, the optimization and characteristics of silylation process are discussed and the hyper fine patterns of quarter-micron are shown using our novel technique.

Citation Download Citation

Masayuki Endo, Takahiro Matsuo, Kazuhiko Hashimoto, Masaru Sasago, and Noboru Nomura "Quarter-micron deep-UV lithography with silylation process", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59766

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