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1 June 1992 Scanning electron microscope system for linewidth measurement of IC
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Abstract
Two methods of measuring the linewidth of IC using a scanning electron microscope (SEM) have been studied. In the first method, the electron beam was digitally scanned by D/A converters and the signal intensity of secondary electrons obtained by an A/D converter was analyzed by image processing technique to determine the linewidth. This method was found to be very simple and fast, but it was necessary to have a standard specimen to calibrate the magnification of the SEM. Moreover, the distortion of the electron optics induced additional errors in the linewidth measurement. In the second method, the electron beam was fixed and the specimen was set on a precise scanning stage driven by a piezoelectric transducer. The linewidth of the specimen has been determined from the signal intensity of the secondary electron and the displacement of the stage measured by a laser interferometer. This method was used to calibrate the linewidth of the standard specimen. For this study, a system which can be used to measure the linewidth by either of the two methods has been developed. The Monte Carlo simulation was also carried out to obtain the intensities of secondary and backscattered electrons. The results of the measurements and the simulation are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheon Il Eom, TaeBong Eom, Yeong-Uk Ko, and Myung-Sai Chung "Scanning electron microscope system for linewidth measurement of IC", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59784
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