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1 June 1992 Use of scatterometry for resist process control
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Abstract
The formation of resist lines having submicron critical dimensions (CDs) is a complex multistep process, requiring precise control of each processing step. Optimization of parameters for each processing step may be accomplished through theoretical modeling techniques and/or the use of send-ahead wafers followed by scanning electron microscope measurements. Once the optimum parameters for any process having been selected, (e.g., time duration and temperature for post-exposure bake process), no in-situ CD measurements are made. In this paper we describe the use of scatterometry to provide this essential metrology capability. It involves focusing a laser beam on a periodic grating and predicting the shape of the grating lines from a measurement of the scattered power in the diffraction orders. The inverse prediction of lineshape from a measurement of the scatter power is based on a vector diffraction analysis used in conjunction with photolithography simulation tools to provide an accurate scatter model for latent image gratings. This diffraction technique has previously been applied to looking at latent image grating formation, as exposure is taking place. We have broadened the scope of the application and consider the problem of determination of optimal focus.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth P. Bishop, Lisa-Michelle Milner, S. Sohail H. Naqvi, John Robert McNeil, and B. L. Draper "Use of scatterometry for resist process control", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59832
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