Advanced i-line resist performance with and without phase-shift masks

Nicholas K. Eib; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag

doi:10.1117/12.130313

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1 June 1992 Advanced i-line resist performance with and without phase-shift masks

Nicholas K. Eib, Eytan Barouch, Uwe Hollerbach, Steven A. Orszag

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Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130313
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

We propose in this paper a new imaging technology for the 64M DRAM, named "CQUEST” (Canon QUadrupole Effect for Stepper Technology). CQUEST is derived from the mathematical analysis of the partial coherence theory1. It can provide almost the same effects with conventional masks as those that result using phase shift masks. Therefore, it is a promising candidate for next generation lithography. Simulation and some experimental results will be shown to substantiate the above. As shown in the results, the 64M DRAM process can be achieved with the existing i-line technology.

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Nicholas K. Eib, Eytan Barouch, Uwe Hollerbach, and Steven A. Orszag "Advanced i-line resist performance with and without phase-shift masks", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130313

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