Translator Disclaimer
Paper
1 June 1992 Advanced i-line resist performance with and without phase-shift masks
Author Affiliations +
Abstract
We propose in this paper a new imaging technology for the 64M DRAM, named "CQUEST” (Canon QUadrupole Effect for Stepper Technology). CQUEST is derived from the mathematical analysis of the partial coherence theory1. It can provide almost the same effects with conventional masks as those that result using phase shift masks. Therefore, it is a promising candidate for next generation lithography. Simulation and some experimental results will be shown to substantiate the above. As shown in the results, the 64M DRAM process can be achieved with the existing i-line technology.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicholas K. Eib, Eytan Barouch, Uwe Hollerbach, and Steven A. Orszag "Advanced i-line resist performance with and without phase-shift masks", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130313
PROCEEDINGS
24 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top