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1 June 1992 Exploring the limits of phase-shift lithography: Part I--the alternating shifter
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Abstract
Phase shift technology shows promise to extend the useful resolution and focus latitude to contemporary optical steppers. If successful in application, this represents significant cost savings to the manufacturing wafer fobs provided that the steppers can be used or modified to take advantage of phase-shift techniques. In this paper we explore the limits of phase-shift lithography, particularly at i-line. We do this following a two-fold approach: a) using simulations and b) collecting experimental data using different resist processes and phase-shift techniques. We conclude that using state-of-the-art photoresist processes and phase-shift techniques, i-line optical lithography can be extended to the 0.25 ?m regime.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shane R. Palmer, Cesar M. Garza Sr., Craig B. Sager, and Patrick Reynolds "Exploring the limits of phase-shift lithography: Part I--the alternating shifter", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130311
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