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1 June 1992 Narrow band KrF excimer laser for mass production of ULSI ICs
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Abstract
A narrow band KrF excimer laser system for lithography has been developed. Its durability has been proved up to 2 billion shots that correspond to one year operation in mass production line. The system has kept the average power of 6W with the power stability within +- 3% and the spectral line-width 1.2 pm (FWHM) with the wavelength stability within +- 0.2 pm. The integration of the spectrum has indicated that 95% of the spectral energy lay inside 4.6 pm band during 2 billion shots
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hakaru Mizoguchi, Osamu Wakabayashi, Noritoshi Ito, Masahiko Kowaka, Junichi Fujimoto, Yukio Kobayashi, Takanobu Ishihara, Yoshiho Amada, and Yasuhiro Nozue "Narrow band KrF excimer laser for mass production of ULSI ICs", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130349
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